Samsung to use TSMC's 3nm process for Nvidia's NVHBM base dies
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Samsung to use TSMC's 3nm process for Nvidia's NVHBM base dies

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Signals

Strategic Overview

  • 01.
    Samsung Electronics has decided to manufacture the base die for Nvidia's next-generation custom HBM (NVHBM) using TSMC's 3-nanometer process, at Nvidia's request.
  • 02.
    This is the first time Samsung and TSMC have worked together at the HBM manufacturing stage, coming after two decades as rivals in contract chipmaking, and it breaks Samsung's practice of building both the core die and base die for its NVHBM in-house under a turnkey model.
  • 03.
    Nvidia asked Samsung, SK Hynix, and Micron to standardize the NVHBM base die on TSMC's 3nm process, and to align their core/DRAM dies on the same sixth-generation 1c process, to ensure consistent performance across suppliers.
  • 04.
    Samsung is still validating whether it could also produce the NVHBM base die at its own foundry, as a hedge.

Deep Analysis

The Yield Gap That Forced Samsung's Hand

A base die is the bottom layer of an HBM stack - a system semiconductor that handles I/O and signal routing, and in Nvidia's design now also holds the memory controller itself [5], sitting beneath the stacked DRAM core dies. Until this deal, Samsung built both pieces itself: the DRAM core die and the base die, a turnkey approach that gave it end-to-end control of its HBM supply [1]. That changes for Nvidia's custom NVHBM specifically. The reported reason is blunt: TSMC's 3nm process is running yields estimated above 90%, while Samsung Foundry's comparable 2-nanometer (SF2) node is estimated near 60% [6]. For a product line Nvidia is staking its next GPU generation on, a roughly 30-point yield gap is not a rounding error - it is the difference between a dependable supply and a bottleneck.

Nvidia's Unusual Leverage Over Three Rival Memory Makers

What stands out isn't just Samsung's concession - it's who orchestrated it. Nvidia reportedly asked all three of its HBM suppliers - Samsung, SK Hynix, and Micron - to standardize NVHBM base-die manufacturing on TSMC's 3nm process, and to align their core/DRAM dies on the same sixth-generation 1c process, so one chip design behaves identically regardless of who built it [1]. That is an unusual degree of control for a fabless buyer to exert over three competing manufacturers simultaneously: Nvidia isn't just picking a winner, it is forcing convergence. SK Hynix was already most of the way there, having used TSMC's 12-nanometer logic process for its HBM4 base dies and now prioritizing TSMC's 3nm for HBM4E and future custom parts [4]. Micron is following the same script, routing both NVHBM and standard HBM4E base-die work to TSMC rather than its own fabs [4]. Samsung was the last of the three to be reported making this move, and the only one of the three with its own major foundry business at stake.

Samsung Isn't Fully Conceding - It's Hedging

Samsung's move reads less like capitulation than a calculated hedge. Even as it hands NVHBM base-die work to TSMC, the company is reportedly still validating whether it could manufacture that same base die at its own foundry, as a hedge [1]. The concession is also narrower than headlines suggest: Samsung's turnkey model survives everywhere else. Samsung Foundry still applies its own 4-nanometer process to the base dies of standard HBM4 and HBM4E, the JEDEC-standard products that aren't custom-built for a single customer [7]. In effect, Samsung now runs two parallel HBM strategies at once - turnkey for the industry-standard parts it fully controls, and a split build, pairing its own core die with a TSMC-made base die, for Nvidia's custom NVHBM [4]. That split arrives as Samsung's foundry division is still posting losses, albeit shrinking ones - down 41% year-over-year to roughly $2.95 billion in 2026 [3].

Why This Is Happening Now: A Looming HBM Shortage

The timing isn't incidental. UBS projects 2027 HBM demand at 61.5 billion gigabits, up 91% year-over-year, against roughly 54.6 billion gigabits of new shipments - a shortfall on the order of 10-11% [2]. NVHBM itself is built to squeeze more performance per wafer: Nvidia claims up to 30% higher bandwidth and 15% lower power versus standard HBM4E, partly by moving its custom memory controller directly into the base die rather than the GPU compute die, which also frees up to 25% more area on the GPU itself [5]. With Nvidia's reported supply commitments reaching $279 billion in Q2 FY27 - up from $119 billion the prior quarter - and Nvidia's Feynman GPUs, expected in 2028, cited as NVHBM's potential first adopter platform [5], Nvidia has every incentive to lock down a predictable, high-yield base-die supply before demand peaks, rather than risk a shortfall spread unevenly across three suppliers each using a different manufacturing recipe.

The Capacity Catch Nobody's Resolved Yet

Not everyone is convinced the standardization fully solves Nvidia's problem. A notable line of pushback circulating on X argues that TSMC can't simply absorb this extra work: TSMC's 3nm capacity is also committed to building Nvidia's own Rubin and Rubin Ultra GPUs, which is why some commentators see Samsung's in-house foundry option as the more critical fallback precisely because TSMC has limited wafer capacity to spare for NVHBM base dies. That tension lines up with the reporting that Samsung itself hasn't abandoned its own-foundry validation [1]. Coverage of the story so far mirrors its niche, B2B nature: Korean financial-news channels picked it up quickly and in depth, while English-language video coverage and community discussion - including on Reddit - have not yet caught up, consistent with a supply-chain story that moves through trade press and analysts before it reaches a general audience. Unnamed industry analysts quoted in the broader English-language coverage summed up the ambivalence: the TSMC deal confirms Samsung's pragmatic approach, but it raises real questions about where Samsung's own foundry roadmap is headed [7].

Historical Context

2026-08-26
Nvidia unveiled NVHBM, moving its custom memory controller into the HBM base die and claiming up to 30% higher bandwidth and 15% lower power versus standard HBM4E, with Amazon's Annapurna Labs named as an early partner.
2026-10-09
TrendForce reported that NVHBM was reshaping base-die strategy across memory makers, with Micron and Samsung turning to external foundries and SK Hynix already using TSMC for HBM4 base dies.
2026-10-18
Seoul Economic Daily first reported Samsung's decision to use TSMC's 3nm process for NVHBM base dies at Nvidia's request.
2026-10-19
Follow-up reporting detailed Nvidia co-designing the NVHBM base die with both Samsung and TSMC, and cited yield and HBM supply/demand figures underlying the decision.

Power Map

Key Players
Subject

Samsung to use TSMC's 3nm process for Nvidia's NVHBM base dies

NV

Nvidia

Designed the NVHBM spec, including a custom memory controller built directly into the base die, and is co-designing the NVHBM base die together with Samsung Electronics and TSMC; asked Samsung, SK Hynix, and Micron to standardize base-die manufacturing on TSMC's 3nm process for consistent performance across suppliers.

SA

Samsung Electronics

Longtime HBM turnkey producer now ceding NVHBM base-die manufacturing to rival TSMC at Nvidia's request, while still applying its own 4nm process to standard HBM4/HBM4E base dies and validating in-house NVHBM capacity as a hedge.

TS

TSMC

Gains a new foundry revenue line building HBM base dies for all three major memory makers, leveraging its 3nm yield advantage to extend influence over its historic foundry rival Samsung into the memory supply chain.

SK

SK Hynix

Already using TSMC's 12nm process for HBM4 base dies and now prioritizing TSMC's 3nm process for HBM4E and future custom HBM products including NVHBM, ahead of Samsung's shift.

MI

Micron

Outsourcing base-die production for both NVHBM and standard HBM4E to TSMC rather than its own fabs, following the same external-foundry path as Samsung and SK Hynix.

Fact Check

7 cited
  1. [1] Samsung to Use TSMC for Base Die in Nvidia's Custom HBM
  2. [2] Nvidia Co-Designs Custom HBM With Samsung, TSMC to Widen Supply
  3. [3] Samsung to Use TSMC's 3nm Process for Nvidia's Custom HBM Base Die
  4. [4] Nvidia's NVHBM Reshapes Memory Makers' Base Die Strategies as Micron, Samsung Turn to External Foundries
  5. [5] Nvidia's Supply Commitments Soar to $279B as Memory Costs Surge, New NVHBM Boosts Bandwidth 30%, Cuts Power 15%
  6. [6] Samsung to Use TSMC Technology for Nvidia's Next-Generation Memory Chips
  7. [7] Samsung to Use TSMC 3nm Process for Nvidia's Next-Gen HBM Base Dies

Source Articles

Top 5

THE SIGNAL.

Analysts

“The TSMC deal confirms Samsung's pragmatic approach, but raises questions about the direction of Samsung's own foundry roadmap.”

Unnamed industry analysts
Cited in trade-press coverage of the report
The Crowd

“Samsung is my top pick among the big three memory makers. TSMC obviously can't allocate much wafer capacity to NVHBM, as it also needs to manufacture Rubin and Rubin Ultra. Only Samsung, with its own foundry, can meet the excess demand for NVHBM.”

@@jukan05942

“According to Korean media reports, Samsung Electronics has decided to manufacture the NVHBM base die using TSMC's 3nm process at Nvidia's request. However, Samsung has not entirely ruled out using its own foundry and is also validating whether it can produce the base die in-house”

@@jukan05325

“Sources: Nvidia asked Samsung, SK Hynix, and Micron to make base dies for its custom NVHBM memory on TSMC's 3nm process; Samsung agreed, its first use of TSMC (Kyu-Seok Shim / Reuters)”

@@Techmeme12

“Nvidia routes all NVHBM base-die production through TSMC 3nm, pulls Samsung onto rival's lines”

@u/VectorWireAI1
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